AT45DB161D-SU

Product Summary

The AT45DB161D-SU is a 2.5-volt or 2.7-volt, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB161D-SU supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66 MHz. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161D-SU also contains two SRAM buffers of 512/528 bytes each. The buffers allow the receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a RapidS serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The AT45DB161D-SU is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage and low-power are essential.

Parametrics

AT45DB161D-SU absolute Maximum Ratings: (1)Temperature under Bias: -55℃to +125℃ ; (2)Storage Temperature: -65℃ to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground : -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V.

Features

AT45DB161D-SU features: (1)Single 2.5V - 3.6V or 2.7V - 3.6V Supply; (2)RapidSSerial Interface: 66 MHz Maximum Clock Frequency-SPI Compatible Modes 0 and 3; (3)User Configurable Page Size:512 Bytes per Page; 528 Bytes per Page; Page Size Can Be Factory Pre-configured for 512 Bytes; (4)Page Program Operation: Intelligent Programming Operation; 4,096 Pages (512/528 Bytes/Page) Main Memory; (5)Flexible Erase Options: Page Erase (512 Bytes); Block Erase (4 Kbytes); Sector Erase (128 Kbytes); Chip Erase (16 Mbits); (6)Two SRAM Data Buffers (512/528 Bytes): Allows Receiving of Data while Reprogramming the Flash Array; (7)Continuous Read Capability through Entire Array:Ideal for Code Shadowing Applications; (8)Low-power Dissipation:7 mA Active Read Current Typical; 25 μA Standby Current Typical; 9 μA Deep Power Down Typical; (9)Hardware and Software Data Protection Features: Individual Sector; (10)Sector Lockdown for Secure Code and Data Storage: Individual Sector; (11)Security: 128-byte Security Register; 64-byte User Programmable Space; Unique 64-byte Device Identifier; (12)JEDEC Standard Manufacturer and Device ID Read; (13)100,000 Program/Erase Cycles Per Page Minimum; (14)Data Retention:20 Years; (15)Industrial Temperature Range; (16)Green (Pb/Halide-free/RoHS Compliant) Packaging Options.

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